TUNNEL FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a tunnel field effect transistor capable of obtaining a heavier drain current through low voltage operation by applying a stronger electric field to a tunnel junction under a determined gate voltage.SOLUTION: The tunnel field effect transistor of the present invention comprises: a semiconductor region formed from a source region, a channel region which is disposed adjacently to the source region and of which the boundary surface is defined as a tunnel junction surface, and a drain region which is disposed adjacently to the channel region; and a gate electrode that is disposed on the semiconductor region via a gate insulation film. The gate electrode is disposed on each of a first gate electrode arrangement position which is located on a surface in the channel region opposite to the tunnel junction surface, and a second gate electrode arrangement position which is located on a bent surface in the channel region that is bent from an end of the opposite surface to the source region, and located in a bending direction of the opposite surface with the first gate electrode arrangement position as a reference.SELECTED DRAWING: Figure 1(a)