| 摘要 |
Techniques herein include using acid-diffusion-controllable to specific diffusion lengths-to create sacrificial structures that, when removed, define a critical dimension (CD) of various features and contact openings. Removing such sacrificial structures defines a trench of a precisely controllable width. The surrounding material is then neutralized from additional solubility shifts using a ballistic electron treatment, thereby creating a first mask layer. A second mask layer formed on top of the first mask layer can be lithographically exposed and developed. The combined mask layers define a pattern for transfer into an underlying target layer. Accordingly, techniques disclosed herein enable patterning of features and contact openings having widths in a range from less than about 1 nanometer and up to around 50 nanometers or more. Techniques herein can also enable use of high-speed EUV (extreme ultraviolet) patterning. |
