BIDIRECTIONAL POWER SEMICONDUCTOR DEVICE

摘要

A bidirectional power semiconductor device (1) with full turn-off control in both current directions and improved electrical and thermal properties is provided, the device (1) comprises a plurality of first gate commutated thyristor (GCT) cells (20) and a plurality of second GCT cells (40) alternating with each other, a first base layer (23) of each first GCT cell (20) is separated from a neighbouring second anode layer (45) of a neighbouring second GCT cell (40) by a first separation region (50), and a second base layer (43) of each second GCT cell (40) is separated from a neighbouring first anode layer (25) of a neighbouring first GCT cell (20) by a second separation region (60).