| 摘要 |
The present invention discloses a method for controlling a slope of ion energy. The method includes the following steps: receiving setting information representing that an etching motion is to be performed by using a radio frequency (RF) pulse signal, wherein an RF pulse signal includes a first state and a second state, and the first state has a higher power level than the second state; and receiving a pulse slope associated with the RF pulse signal, wherein the pulse slope provides a transition between the first state and the second state, and the pulse slope is not practically limitless to reduce the amount of the ion energy during the etching motion; determining power levels and timings to reach the pulse slope; and transmitting the power levels and the timings to an RF generator to generate the RF pulse signal. |
