NITRIDE-BASED DIODE HAVING FIELD RELIEF PART AND METHOD OF FABRICATING THE SAME

摘要

The present invention relates to a method for fabricating a nitride-based diode element capable of alleviating electric field concentrations on an interface between a nitride-based semiconductor layer and an electrode layer forming a Schottky junction. The nitride-based diode element according to one embodiment includes: a substrate; and a nitride-based first semiconductor pattern layer doped as a first type and disposed on the substrate. Also, the nitride-based diode element includes: a bottom electrode pattern layer and a nitride-based second semiconductor pattern layer doped as a first type, which are disposed on the first semiconductor pattern layer and make ohmic-contact with the first semiconductor pattern layer, respectively; a nitride-based electric field relief pattern layer doped as a second type and disposed on the second semiconductor pattern layer; and a top electrode pattern layer disposed on the second nitride-based semiconductor pattern layer so as to cover the electric field relief pattern layer. The top electrode pattern layer makes the Schottky junction with the second semiconductor pattern layer.