发明名称 BONDING WIRE FOR SEMICONDUCTOR APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a bonding wire capable of simultaneously satisfying ball bonding reliability required for a bonding wire for a memory and wedge bondability.SOLUTION: The bonding wire includes: a core material, containing one or more kinds of Ga, In, and Sn of 0.1 to 3.0 at.% in total, whose remaining part is composed of Ag and inevitable impurities; and a coating layer, formed on a surface of the core material, containing one or more kinds of Pd and Pt, or containing Ag and one or more kinds of Pd and Pt, whose remaining part is composed of inevitable impurities. The thickness of the coating layer is 0.005 to 0.070 μm.SELECTED DRAWING: None
申请公布号 JP2016115875(A) 申请公布日期 2016.06.23
申请号 JP20140255111 申请日期 2014.12.17
申请人 NIPPON STEEL SUMIKIN MATERIALS CO LTD;NIPPON MICROMETAL CORP 发明人 OYAMADA TETSUYA;UNO TOMOHIRO;ODA TAIZO;YAMADA TAKASHI
分类号 H01L21/60;C22C5/06 主分类号 H01L21/60
代理机构 代理人
主权项
地址