| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer processing method capable of reducing division scraps remaining on the side surface of a chip after division.SOLUTION: A processing method for dividing a semiconductor wafer 11 having a plurality of chip regions on a surface along a division schedule line, comprises the steps of: forming a first modified layer 25 serving as a division origin along the division schedule line by condensing laser beams having permeability with respect to the wafer into a region t2 having a depth which does not reach a finishing thickness of the chip inside the wafer with a first output; forming a second modified layer 23 which induces division by condensing laser beams into a finishing thickness region t1 of the chip inside the wafer with a second output lower than the first output before or after forming the first modified layer; dividing the wafer into chips by applying external force to the wafer; and sticking an adhesive tape T to a surface of the wafer at least at any point of time until the division step is performed and thinning the wafer to the finishing thickness of the chip by grinding a rear surface 11b of the wafer after the division step is performed. |
