Substituted 1,2,3-triylidenetris(cyanomethanylylidene)) cyclopropanes for VTE, electronic devices and semiconducting materials using them

摘要

The present invention relates to a process for preparation of an electrically doped semicon-ducting material comprising a [3]-radialene p-dopant or for preparation of an electronic device containing a layer comprising a [3]-radialene p-dopant, the process comprising the steps (i) loading an evaporation source with the [3]-radialene p-dopant and (ii) evaporating the [3]-radialene p-dopant at an elevated temperature and at a reduced pressure, wherein the [3]-radialene p-dopant is selected from compounds having a structure according to formula (I)
wherein A 1 and A 2 are independently aryl- or heteroaryl-substituted cyanomethylidene groups.