| 摘要 |
Provided is a manufacturing method of a highly dense CuGa target. More specifically, the manufacturing method comprises: a step of heat-treating a CuGa powder including 15-25 wt% of Ga, and the remaining consisting of Cu and other unavoidable impurities at 200-320°C for 1-24 hours; and a step of forming a CuGa target by a low temperature spray coating the CuGa powder on a substrate. The manufacturing method of a highly dense CuGa target is able to form a high quality thin film. |
