| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for determining a state of a substrate suctioned to a support medium disposed in a processing tank during plasma processing and a plasma processing apparatus realizing the method.SOLUTION: A plasma processing apparatus 100 includes: a processing tank 101 using plasma; a support medium 103 disposed in the processing tank 101 and on which a substrate 102 is placed contacting with one surface 107s; temperature measurement means 104 attached to the support medium 103 and measuring a temperature of an area near the one surface 107s; and temperature control means 105 attached to the support medium 103 and controlling the temperature of the area near the one surface 107s. A determination method of a substrate suction state includes the steps of: using the plasma processing apparatus 100 and measuring a first temperature T1 of the substrate 102 by the temperature measurement means 104 before plasma is generated; measuring a second temperature T2 of the substrate 102 by the temperature measurement means 104 after the plasma is generated; and determining the suction state of the substrate 102 suctioned to the support medium 103 on the basis of a positive or negative sign attached to a value showing a difference T2-T1 between the first temperature T1 and the second temperature T2. |
