发明名称 |
SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATION OF SAME |
摘要 |
Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures. |
申请公布号 |
EP3033767(A1) |
申请公布日期 |
2016.06.22 |
申请号 |
EP20140835785 |
申请日期 |
2014.07.24 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
JAYANTI, SRIKANT;SIMSEK-EGE, FATMA ARZUM;AELLA, PAVAN KUMAR REDDY |
分类号 |
H01L27/11556;H01L21/28;H01L27/11524;H01L29/66;H01L29/788 |
主分类号 |
H01L27/11556 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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