发明名称 SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATION OF SAME
摘要 Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.
申请公布号 EP3033767(A1) 申请公布日期 2016.06.22
申请号 EP20140835785 申请日期 2014.07.24
申请人 MICRON TECHNOLOGY, INC. 发明人 JAYANTI, SRIKANT;SIMSEK-EGE, FATMA ARZUM;AELLA, PAVAN KUMAR REDDY
分类号 H01L27/11556;H01L21/28;H01L27/11524;H01L29/66;H01L29/788 主分类号 H01L27/11556
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