发明名称 |
METHOD OF FORMING A SEMICONDUCTOR DEVICE INCLUDING TRENCH TERMINATION AND TRENCH STRUCTURE THEREFOR |
摘要 |
In an embodiment, a method of forming a semiconductor may include forming a plurality of active trenches and forming a termination trench substantially surrounding an outer periphery of the plurality of active trenches. The method may also include forming at least one active trench of the plurality of active trenches having corners linking trench ends to sides of active trenches wherein each active trench of the plurality of active trenches has a first profile along the first length and a second profile at or near the trench ends; and forming a termination trench substantially surrounding an outer periphery of the plurality of active trenches and having a second profile wherein one of the first profile or the second profile includes a non-linear shape. |
申请公布号 |
US2016172234(A1) |
申请公布日期 |
2016.06.16 |
申请号 |
US201615047874 |
申请日期 |
2016.02.19 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
GRIVNA Gordon M.;HOSSAIN Zia;SALIH Ali |
分类号 |
H01L21/762;H01L29/06;H01L21/768 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Phoenix AZ US |