发明名称 DVC UTILIZING MEMS RESISTIVE SWITCHES AND MIM CAPACITORS
摘要 The present invention generally relates to a MEMS DVC utilizing one or more MIM capacitors. The MIM capacitor may be disposed between the MEMS device and the RF pad or the MIM capacitor may be integrated into the MEMS device itself. The MIM capacitor ensures that a low resistance for the MEMS DVC is achieved.
申请公布号 US2016172112(A1) 申请公布日期 2016.06.16
申请号 US201414904855 申请日期 2014.08.01
申请人 CAVENDISH KINETICS, INC. 发明人 KNIPE Richard L.;SMITH Charles G.;GADDI Roberto;VAN KAMPEN Robertus Petrus
分类号 H01G5/40;H01L49/02;H01G5/16 主分类号 H01G5/40
代理机构 代理人
主权项 1. A MEMS DVC, comprising: an RF pad disposed over a substrate; a MEMS device disposed over the substrate, the MEMS device having one or more switching elements disposed within a cavity formed over the substrate, the MEMS device further comprising an RF electrode disposed within the substrate, wherein the one or more switching elements are movable from a position in electrical contact with the RF electrode and a position spaced from the RF electrode; and a MIM capacitor disposed over the substrate, the MIM capacitor coupled between the RF pad and the MEMS device.
地址 San Jose CA US