NON-VOLATILE MEMORY WITH CONTROLLED PROGRAM/ERASE

摘要

A method for programming/erasing a non-volatile memory (NVM) includes performing a program/erase operation on a portion of the NVM using a first set of parameters. The method further includes determining whether each cell in the portion of the NVM passes a first margin level, if not determining which one of a set of lower margin levels than the first margin level each cell in the portion of the NVM passes. The method further includes modifying at least one of the set of parameters associated with a subsequent program/erase operation for the portion of the NVM based on the determined one of the set of lower margin levels.