| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel composition for forming a protective film which, in a lithography technique using EUV or an electron beam, can improve nano edge roughness by reducing effects of OOB which occur at the time of exposure, satisfies resolution and sensitivity sufficiently, and also can suppress generation of an outgas.SOLUTION: The composition for forming a protective film is used for surface protection of a resit film in a resist pattern forming method using EUV or an electron beam, comprises [A] a polymer and [B] an organic solvent, where [A] the polymer includes a structural unit (I) containing a group represented by the following formula (i-1) (however, excluded is an EUV resist upper layer-forming composition used in an EUV lithography process, comprising; a resin having a naphthalene ring on a main chain or a side chain; and a solvent). In the following formula (i-1), n is 0, 2, or 3; and m is an integer which satisfies: 1≤m≤5+2n.SELECTED DRAWING: None |
