NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

摘要

To realize a nitride semiconductor light-emitting element having excellent lifespan characteristics in addition to improved light emission efficiency compared with conventional elements. A nitride semiconductor light-emitting element having a light-emitting layer obtained by alternately stacking a well layer comprising a nitride semiconductor and a barrier layer comprising a nitride semiconductor between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein a final barrier layer, which is the barrier layer formed at a position in contact with the p-type nitride semiconductor layer, contains n-type impurities, and the concentration of n-type impurities at the interface with the p-type nitride semiconductor layer is 4×1017/cm3 or less.

主权项

1. A nitride semiconductor light-emitting element comprising:
an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and a light-emitting layer formed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, the light-emitting layer being obtained by alternately stacking at least one well layer comprising a nitride semiconductor and at least one barrier layer comprising a nitride semiconductor, wherein a final barrier layer among the barrier layer(s), which is a barrier layer formed at a position in contact with the p-type nitride semiconductor layer, contains n-type impurities, and the concentration of the n-type impurities at an interface with the p-type nitride semiconductor layer is 4×1017/cm3 or less.