SOLID-STATE IMAGING DEVICE

摘要

The present invention addresses the problem of providing a solid-state imaging device that minimizes production costs and that has high detection accuracy. A solid-state imaging device is provided with: a first optical layer that transmits visible light and at least a part of near-infrared light; a second optical layer that absorbs at least a part of near-infrared light; and a pixel array comprising a first light-receiving element that detects the visible light transmitted by the first and second optical layers and a second light-receiving element that detects the near-infrared light transmitted by the first optical layer. The second optical layer comprises an opening in a part thereof corresponding to the second light-receiving element. When the wavelength band from the shortest wavelength (X1) having a transmittance of 30% or more to the longest wavelength (X2) having a transmittance of 30% or less among wavelengths in a predetermined range within the near-infrared light in the first optical layer as measured from the vertical direction is denoted by X, the product of the average transmittance in the vertical direction in the wavelength band (X) in the first optical layer and the average transmittance in the vertical direction in the wavelength band (X) in the second optical layer is 70% or less.