| 摘要 |
A manufacturing method of a semiconductor device includes applying at least one of a particle ray and a radial ray to a surface of a semiconductor substrate on which a transistor including a gate insulation film and a gate electrode has been formed adjacent to the surface, and annealing the semiconductor substrate for recovering a crystal defect contained in the gate insulation film and the gate electrode, after the applying. Further, the manufacturing method includes pre-annealing for reducing a content of a hydrogen molecule and a water molecule contained in the gate insulation film and the gate electrode to a predetermined concentration, before the applying. In the semiconductor device manufactured by this method, a concentration of thermally stable defect existing in the gate insulation film is reduced to a predetermined concentration. |
