| 摘要 |
Disclosed is an electronic device, comprising a substrate (208), an n-doped buried layer (210), an n-doped region (212,220,222) adjacent to the n-doped buried layer and the substrate, the n-doped region comprising a first n-doped region (212) adjacent to the n-doped buried layer and having a first doping concentration, and a second n-doped region (222) not adjacent to the n-doped buried layer and having a second doping concentration less than the first doping concentration, and a p-doped region (224) adjacent to the second n-doped region and to the substrate, and a spiral resistor (228) coupled to the first n-doped region and to the p-doped region. Thus, regions 212,214,216 and 218 are electrically isolated from the rest of the circuit, which is important for devices integrated in these regions that may be at or near the high voltage (VIN), for example in DC-to-DC converters. |
