| 摘要 |
A method for manufacturing an amorphous IGZO TFT-based transient semiconductor is disclosed. The method comprises the steps of: (a) stacking a thermal oxide film on a silicone substrate, and depositing a nickel film on the thermal oxide film; (b) depositing a sub-chemical plasma layer on the nickel film; (c) setting and patterning a gate region on the deposited sub-chemical plasma layer, and depositing a metal layer; (d) lifting off the metal layer to form a gate metal film layer, and depositing a gate insulating layer on the gate metal film layer; (e) sputtering the gate insulating layer to deposit an amorphous IGZO layer; (f) etching an active region of the amorphous IGZO layer and the gate insulating layer; (g) forming a source electrode and a drain electrode on the amorphous IGZO layer and attaching a thermal separation tape thereto; (h) delaminating the nickel film using deionized water; (i) etching and washing the nickel film and transferring the nickel film onto a polyvinyl alcohol film; and (j) locating the polyvinyl alcohol film on a thermal plate to delaminate the thermal separation tape. Thus, an IGZO TFT and circuit can be implemented using the currently produced amorphous IGZO TFT platform on a carrier substrate based on silicone and nickel stable at high temperatures, thereby overcoming the limit of a biodegradable substrate. |
