发明名称 SEMICONDUCTOR OPTICAL ELEMENT AND SURFACE EMITTING SEMICONDUCTOR OPTICAL ELEMENT
摘要 PROBLEM TO BE SOLVED: To inhibit variation in optical coupling coefficients caused by variation in depths of a refractive-index-coupled diffraction gratings or periodic structure layers.SOLUTION: A semiconductor optical element 100 comprises a semiconductor substrate 1, a diffraction grating 2, a diffraction grating embedded layer 3, an active layer 4 and a clad layer 5. The diffraction grating 2 includes a plurality of grating pieces 2a which are arranged in a direction (Z direction) on the substrate 1, where laser beams are emitted. Each of the grating pieces 2a has a lower part 9 and an upper part 6 provided on the lower part 9. The lower parts 9 of the grating pieces 2a are connected to form one layer on a lower part of the diffraction grating 2. The upper part 6 has a first refractive coefficient nand the lower part 9 has a second refractive coefficient n(where n<n). A refractive coefficient nof the diffraction grating embedded layer 3 is intermediate in refractive coefficient between nand n. That is, n<n<n.SELECTED DRAWING: Figure 3
申请公布号 JP2016103594(A) 申请公布日期 2016.06.02
申请号 JP20140241903 申请日期 2014.11.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 FUCHIDA AYUMI;NAKAMURA NAOMIKI
分类号 H01S5/12 主分类号 H01S5/12
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