发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable. |
申请公布号 |
US2016155825(A1) |
申请公布日期 |
2016.06.02 |
申请号 |
US201615017459 |
申请日期 |
2016.02.05 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
IWAMATSU Toshiaki;TERADA Takashi;SHINOHARA Hirofumi;ISHIKAWA Kozo;TSUCHIYA Ryuta;HAYASHI Kiyoshi |
分类号 |
H01L29/66;H01L21/28;H01L21/265;H01L21/308;H01L21/321 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |