METHOD AND SYSTEM FOR CMOS IMAGE SENSING DEVICE

摘要

Method and system for manufacturing CMOS image sensing device with reduced blooming. The method includes a step for providing a substrate material. The substrate material can be characterized by a first dimension and a second dimension. In addition, the method includes a step for defining an active region on the substrate material. The active region is characterized by a third dimension and a fourth dimension. The method further includes a step for defining a non-active region on the substrate material. The non-active region is different from the active region. The non-active region is characterized by a fifth dimension and a sixth dimension, the non-active region including a silicon material. The method includes a step for defining a depletion region within the active region. In addition, the method includes a step for forming an n-type region positioned above the depletion region.

主权项

1. A pixel of a CMOS image sensor characterized by reduced blooming comprising:
a p-type silicon substrate, the p-type silicon substrate including a top side and a bottom side; an active region being defined inside the p-type silicon substrate, the active region including a depletion region and an n-type silicon material, the active region being positioned within the p-type silicon substrate, wherein the active region is characterized by a first dimension and a second dimension; at least one metal line positioned at the proximity of the top side; a non-active region, the non-active region being different from the active region, the non-active region being characterized by a first energy state; and at least one barrier region being outside of the active region, the at least one barrier region being characterized by a second energy state, the second energy state being different from the first energy state.