The present invention relates to a high voltage driver. The high voltage driver according to an embodiment of the present invention may include: a low side switching unit including first and second to n-th NMOS transistors connected to each other in series between an output terminal and a ground, wherein the first NMOS transistor is turned on or turned off depending on a first control signal; a high side switching unit including first and second to n-th PMOS transistors connected to each other in series between a power supply input terminal and an output terminal, wherein the first PMOS transistor is operated complementarily to the first NMOS transistor depending on a second control signal; a first voltage dividing unit dividing a voltage between the output terminal and the ground and providing the divided voltages to the second to n-th NMOS transistors; and a second voltage dividing unit dividing the voltage between the output terminal and the ground and providing the divided voltages to the second to n-th PMOS transistors. According to the present invention, a high voltage driving signal may be generated by using a minimal number of transistors having a low breakdown voltage.
申请公布号
KR20160062515(A)
申请公布日期
2016.06.02
申请号
KR20140165363
申请日期
2014.11.25
申请人
SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人
JEONG, MOON SUK;KWON, YONG IL;PARK, TAH JOON;JO, BYEONG HAK