| 摘要 |
PROBLEM TO BE SOLVED: To provide an element isolation method in a GaN layer capable of efficiently isolating an element in the GaN layer.SOLUTION: The element isolation method in a GaN layer is an element isolation method for isolating the GaN layer into plural elements by performing etching on a GaN layer disposed on a substrate after a masking. A gas mixture added with CHFto BClis used as the etching gas. |
