Method for manufacturing a semiconductor structure, semiconductor structure, and electronic device

摘要

A method for manufacturing a semiconductor structure 1 comprises: providing a substrate 2 including a first semiconductor material; forming a dielectric layer 3 on a surface of the substrate 2; forming an opening in the dielectric layer 3 having a bottom reaching the substrate 2; providing a second semiconductor material 7B in the opening and on the substrate 2, the second semiconductor material 7B being encapsulated by a further dielectric material 6 forming a filled cavity; melting the second semiconductor material 7B in the cavity; recrystallizing the second semiconductor material 7B in the cavity; laterally removing the second semiconductor material 7B at least partially for forming a lateral surface at the second semiconductor material 7B; and forming a third semiconductor material 11 on the lateral surface of the second semiconductor material 7B. Also disclosed is the semiconductor structure 1 produced by the above method. The invention seeks to form compound semiconductor layers on silicon substrates without lattice mismatch deformations.