发明名称 Light-emitting device and light-emitting device package
摘要 The invention provides a light-emitting device and a light-emitting device package. The light-emitting device includes: a light-emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer sequentially stacked in that order; a first electrode disposed on a surface of the first semiconductor layer away from the active layer and electrically connected with the first semiconductor layer; a first electrode layer disposed on a surface of the second semiconductor layer away from the active layer and electrically connected with the second semiconductor layer; a second electrode penetrating through the light-emitting structure and being electrically connected with the first electrode layer; an insulating layer disposed between the light-emitting structure and the second electrode. The invention draws electrodes from the bottom of the light-emitting device, and therefore can avoid the leads to absorb and block light and thereby improve light extraction efficiency.
申请公布号 US9356199(B1) 申请公布日期 2016.05.31
申请号 US201514436457 申请日期 2015.01.14
申请人 Shenzhen China Star Optoelectronics Technology Co., Ltd 发明人 Cheng Yan;Zhou Gege
分类号 H01L33/42;H01L33/46;H01L33/06;H01L33/48;H01L33/62 主分类号 H01L33/42
代理机构 代理人 Cheng Andrew C.
主权项 1. A light-emitting device comprising: a light-emitting structure, wherein the light-emitting structure comprises a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer sequentially stacked in that order, the second conductive type semiconductor layer acts as a light output surface of the light-emitting structure; a first electrode, wherein the first electrode is disposed on a surface of the first conductive type semiconductor layer away from the active layer and is electrically connected with the first conductive type semiconductor layer; a first electrode layer, wherein the first electrode layer is disposed on a surface of the second conductive type semiconductor layer away from the active layer and is electrically connected with the second conductive type semiconductor layer; a second electrode, wherein the second electrode penetrates through the light-emitting structure and is electrically connected with the first electrode layer; an insulating layer, wherein the insulating layer is disposed between the light-emitting structure and the second electrode; wherein the light-emitting device further comprises a second electrode layer, the second electrode layer is disposed on the surface of the first conductive type semiconductor layer away from the active layer, the first electrode and the first conductive type semiconductor layer are electrically connected with each other via the second electrode layer, the second electrode penetrates through the second electrode layer; the insulating layer further is disposed between the second electrode and the second electrode layer.
地址 Shenzhen, Guangdong CN