High power blue-violet III-nitride semipolar laser diodes

摘要

A high power blue-violet Ill-nitride semipolar laser diode (LD) with an output power in excess of 1 W, a slope efficiency of more than 1 W/A, and an external quantum efficiency (EQE) in excess of 25% and more preferably, in excess of 35%. These operating characteristics make these laser diodes suitable for use in solid state lighting systems.

主权项

1. An opto-electronic device, comprising:
at least one blue-violet III-nitride semipolar laser diode that comprises an AlGaN-cladding-free (ACF) laser diode, wherein the blue-violet III-nitride semipolar laser diode is comprised of one or more III-nitride layers epitaxially grown on or above a substrate in a semipolar (20-2-1) orientation, the III-nitride layers including a multiple quantum well (MQW) active region positioned between an n-type separate confinement heterostructure (SCH) and a p-type separate confinement heterostructure (SCH), the active region, the n-type separate confinement heterostructure and the p-type separate confinement heterostructure being positioned between one or more n-type III-nitride layers and one or more p-type III-nitride layers, the p-type III-nitride layers comprising Mg-doped p-type III-nitride layers, and the blue-violet III-nitride semipolar laser diode having an output power in excess of about 1 W, a slope efficiency of more than about 1 W/A, and an external quantum efficiency (EQE) in excess of about 35%.