发明名称 Methods for thick films thermoelectric device fabrication
摘要 Solid state thermoelectric energy conversion devices can provide electrical energy from heat flow, creating energy, or inversely, provide cooling through applying energy. Thick film methods are applied to fabricate thermoelectric device structures using microstructures formed through deposition and subsequent thermal processing conditions. An advantageous coincidence of material properties makes possible a wide variety of unique microstructures that are easily applied for the fabrication of device structures in general. As an example, a direct bond process is applied to fabricate thermoelectric semiconductor thick films on substrates by printing and subsequent thermal processing to form unique microstructures which can be densified. Bismuth and antimony telluride are directly bonded to flexible nickel substrates.
申请公布号 US9353445(B2) 申请公布日期 2016.05.31
申请号 US201514599227 申请日期 2015.01.16
申请人 BERKEN ENERGY LLC 发明人 Petkie Ronald R.
分类号 H01L21/00;C23C28/00;H01L35/34;C23C30/00;H01L35/16;H01L35/18;H01L35/32 主分类号 H01L21/00
代理机构 Brownstein Hyatt Farber Schreck LLP 代理人 Brownstein Hyatt Farber Schreck LLP ;Prendergast Paul J.;Crowley-Weber Cara
主权项 1. A process for producing a thick film precursor composition with a large free volume microstructure, the process comprising the steps of: (a) forming a powder comprising of one or more elements, alloys, or compounds; (b) combining the powder with a vehicle and a thinning agent to form a paste, wherein the volume ratio of powder and vehicle allows the particles to be in partial contact with one another; (c) depositing the paste to form a layer on a surface; (d) drying the layer to remove the thinning agent; and (e) sintering the layer, wherein most of the vehicle is volatized leaving a free volume within the layer; wherein the particles become an interconnected microstructure with a large free-volume within the layer.
地址 Loveland CO US