Power semiconductor module having low gate drive inductance flexible board connection

摘要

A power semiconductor module includes a metallization layer and a power semiconductor die attached to the metallization layer. The die has a first terminal and a second terminal disposed at a side of the die facing away from the metallization layer. The power semiconductor module further includes a first interconnect attached to the first terminal, a second interconnect attached to the second terminal and a flexible board including a first metal layer, a second metal layer and an insulator between the first and the second metal layers so that the first and the second metal layers are electrically insulated from one another. The first metal layer is attached to the first interconnect and the second metal layer is attached to the second interconnect such that the flexible board is spaced apart from the power semiconductor die by the first and the second interconnects.

主权项

1. A power semiconductor module, comprising:
a metallization layer; a power semiconductor die attached to the metallization layer and having a first terminal and a second terminal disposed at a side of the die facing away from the metallization layer; a first interconnect attached to the first terminal; a second interconnect attached to the second terminal; and a flexible board comprising a first metal layer, a second metal layer and an insulator between the first and the second metal layers so that the first and the second metal layers are electrically insulated from one another, wherein the first metal layer is attached to the first interconnect and the second metal layer is attached to the second interconnect such that the flexible board is spaced apart from the power semiconductor die by the first and the second interconnects.