Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

摘要

Provided is a configuration capable of suppressing a variation in characteristics of transistor. The configuration includes: a process chamber; a gas supply unit configured to supply a hard mask forming gas into the process chamber; a substrate support table configured to support a substrate Wn of an nth lot having a film to be etched formed thereon; a heater embedded in the substrate support table; and a controller configured to control a temperature distribution of the heater based on an etching information of a substrate Wm of an mth lot processed prior to the nth lot.

主权项

1. A method of manufacturing a semiconductor device comprising:
(a) placing a substrate Wn of an nth lot having a film to be etched formed thereon on a substrate support accommodated in a process chamber; (b) controlling a surface temperature distribution of the substrate Wn based on an etching information of a substrate Wm of an mth lot processed prior to the nth lot wherein the etching information comprises at least one of in situ information on etch rates at a center portion and a peripheral portion of a surface of the substrate Wm and in situ information on widths of the film to be etched at the center portion and the peripheral portion of the surface of the substrate Wm; and (c) supplying a hard mask forming gas into the process chamber after performing (b).