Methods of forming and using materials containing silicon and nitrogen

摘要

Some embodiments include methods utilizing atomic layer deposition to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses SiI4 as one precursor and uses a nitrogen-containing material as another precursor. Some embodiments include methods of forming a structure in which a chalcogenide region is formed over a semiconductor substrate; and in which SiI4 is used as a precursor during formation of silicon nitride material directly against a surface of the chalcogenide region.

主权项

1. A method of forming a structure, comprising:
forming a chalcogenide region over a semiconductor substrate; and utilizing SiI4 as a precursor during formation of material directly against a surface of the chalcogenide region, where the material comprises silicon and nitrogen and the formation of the material utilizing SiI4 is conducted at temperature of less than or equal to a bout 250° C.