发明名称 |
Overlay displacement amount measuring method, positional displacement amount measuring method and positional displacement amount measuring apparatus |
摘要 |
In an overlay displacement amount measuring method according to an embodiment, a temperature distribution of a substrate during a pattern forming process and a temperature distribution of the substrate during a measuring process for measuring a positional displacement amount between patterns on the substrate by an electron microscope are measured. An expansion/contraction amount of the substrate between two processes is calculated based upon the two temperature distributions, and the positional displacement amount is corrected based upon the expansion/contraction amount. An overlay displacement amount between the pattern and a pattern formed on a layer different from the pattern is measured by an optical measuring apparatus, and the overlay displacement amount is corrected based upon the corrected positional displacement amount. |
申请公布号 |
US9354527(B2) |
申请公布日期 |
2016.05.31 |
申请号 |
US201314075044 |
申请日期 |
2013.11.08 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Sato Hidenori;Komine Nobuhiro |
分类号 |
G03F7/20;G03F9/00 |
主分类号 |
G03F7/20 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. An overlay displacement amount measuring method comprising:
measuring a first temperature distribution of a substrate during a first process that is a process of forming a first pattern on the substrate; measuring a first positional displacement amount between the first patterns by a first electron microscope; measuring a second temperature distribution of the substrate during a second process that is a process of measuring the first positional displacement amount; calculating a first expansion/contraction amount of the substrate between the first process and the second process based upon the first temperature distribution and the second temperature distribution; correcting the first positional displacement amount based upon the first expansion/contraction amount; measuring an overlay displacement amount between the first pattern and a second pattern formed on a layer different from the first pattern by a first optical measuring apparatus; and correcting the overlay displacement amount based upon the corrected first positional displacement amount. |
地址 |
Minato-ku JP |