| 发明名称 | Structure and formation method of memory device | ||
| 摘要 | Structures and formation methods of memory devices are provided. The memory device includes a first electrode, a second electrode, and a resistive layer positioned between the first electrode and the second electrode. The resistive layer has a crystalline portion. A volume ratio of the crystalline portion to the resistive layer is in a range from about 0.2 to about 1. | ||
| 申请公布号 | US9356235(B2) | 申请公布日期 | 2016.05.31 |
| 申请号 | US201414474931 | 申请日期 | 2014.09.02 |
| 申请人 | Winbond Electronics Corp. | 发明人 | Hsu Po-Yen;Liao Hsiu-Han;Chang Shuo-Che;Ho Chia Hua |
| 分类号 | H01L45/00 | 主分类号 | H01L45/00 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A memory device, comprising: a first electrode; a second electrode; and a resistive layer positioned between the first electrode and the second electrode, wherein the resistive layer has a crystalline portion, and a volume ratio of the crystalline portion to the resistive layer is in a range from about 0.2 to about 1. | ||
| 地址 | Taichung TW | ||