发明名称 |
Method for detecting radiation and examination device for the radiation-based examination of a sample |
摘要 |
A method for detecting radiation during the examination of a sample (1) comprises the steps of generating the radiation, more particularly X-ray radiation or proton radiation, by means of a source device (10), passing the radiation through the sample (1), and detecting the radiation by means of at least one photoelectric solid-state detector (20) containing a photoconduction section having a predetermined response threshold and a potential well section for taking up free charge carriers. The solid-state detector (20) is a GaN- or GaAs-based semiconductor detector and the potential well section contains a two-dimensional electron gas (2DEG). A setting of the radiation is provided in such a way that the solid-state detector (20) is operated separately from the response threshold of the photoconduction section and in a sensitivity range of the potential well section. An examination device (100) is also described, said examination device being configured for an examination of a sample (1) using radiation, more particularly X-ray radiation or proton radiation. |
申请公布号 |
US9354330(B2) |
申请公布日期 |
2016.05.31 |
申请号 |
US201314381982 |
申请日期 |
2013.02.15 |
申请人 |
Helmholtz Zentrum Muenchen Deutsches Forschungszentrum fuer Gesundheit und Umwelt (GmbH);Technische Universitaet Muenchen |
发明人 |
Thalhammer Stefan;Hofstetter Markus;Howgate John;Stutzmann Martin |
分类号 |
H05G1/64;G01T1/24;G01N23/083 |
主分类号 |
H05G1/64 |
代理机构 |
Caesar Rivise, PC |
代理人 |
Caesar Rivise, PC |
主权项 |
1. A method for detecting radiation during an investigation of a sample, comprising the following steps:
(a) generation of the radiation with a source device; (b) passing of the radiation through the sample; (c) detection of the radiation using at least one photoelectric solid-state detector, which includes a photoconduction section with a predetermined response threshold and a potential well section for receiving free charge carriers, wherein the solid-state detector is a GaN or GaAs-based semiconductor detector and the potential well section contains a two-dimensional electron gas; and (d) setting of the radiation in such a way that the solid-state detector is operated separately from the response threshold of the photoconduction section and in a sensitivity range of the potential well section. |
地址 |
Neuherberg DE |