| 发明名称 | Semiconductor memory device and method of testing the same | ||
| 摘要 | A semiconductor memory device includes a row input section suitable for receiving a first row signal including a first row command and a first row address, corresponding to an active command, during a test operation of the active command, a column input section suitable for receiving a second row signal including a second row address corresponding to the active command during the test operation of the active command, and a signal control section suitable for generating an internal row signal for an operation of the active command by transforming the first row signal and the second row signal outputted from the row input section and the column input section. | ||
| 申请公布号 | US9355695(B2) | 申请公布日期 | 2016.05.31 |
| 申请号 | US201414526255 | 申请日期 | 2014.10.28 |
| 申请人 | SK Hynix Inc. | 发明人 | Jeong Chun-Seok |
| 分类号 | G11C8/10;G11C7/22;G11C29/00;G11C8/16 | 主分类号 | G11C8/10 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor memory device comprising: a row input section suitable for receiving a first row signal including a first row command and a first row address, corresponding to an active command, during a test operation of the active command; a column input section suitable for receiving a second row signal including a second row address corresponding to the active command during the test operation of the active command; and a signal control section suitable for generating an internal row signal for an operation of the active command by transforming the first row signal and the second row signal outputted from the row input section and the column input section. | ||
| 地址 | Gyeonggi-do KR | ||