发明名称 |
E-BEAM ENHANCED DECOUPLED SOURCE FOR SEMICONDUCTOR PROCESSING |
摘要 |
A semiconductor substrate processing system includes a processing chamber, a substrate support for supporting the substrate in the processing chamber, and a separate plasma chamber separated from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion.to. radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support. |
申请公布号 |
SG10201602780V(A) |
申请公布日期 |
2016.05.30 |
申请号 |
SG10201602780V |
申请日期 |
2012.04.10 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
HOLLAND, JOHN, PATRICK;VENTZEK, PETER, L.G.;SINGH, HARMEET;SHINAGAWA, JUN;KOSHIISHI, AKIRA |
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