| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for management of pollution of a vapor-phase growth apparatus, which makes possible to grasp the status of an ultra-trace of metal pollution in a vapor-phase growth apparatus in detail.SOLUTION: A method for management of pollution of a vapor-phase growth apparatus comprises: a wafer-loading step S1 where a monitor wafer is loaded into a chamber of the vapor-phase growth apparatus; a gas contact step S2 where the monitor wafer is held at a temperature of 0-100°C under a gas atmosphere including a material gas and hydrogen; a wafer-unloading step S3 where the monitor wafer is unloaded from inside the chamber; and a wafer pollution evaluation step where the degree of metal pollution of the monitor wafer is evaluated. In the method, the degree of pollution of the vapor-phase growth apparatus is evaluated on the basis of a result of measurement in the wafer pollution evaluation step.SELECTED DRAWING: Figure 2 |
