| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor power conversion device which can achieve downsizing while ensuring a creeping distance of a high potential terminal.SOLUTION: In a semiconductor power conversion device in which a plurality of discrete semiconductor elements are secured to a substrate, each of the semiconductor elements Se includes a heat radiation surface formed on one surface and a plurality of terminals G, C, E which project from lateral faces crossing the heat radiation surface and which are held by the substrate, and a high potential terminal C having higher potential to the other terminals out of the plurality of terminals is bent in an in-plane direction including at least the heat radiation surface.SELECTED DRAWING: Figure 1 |
