SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor storage device comprising a capacitor having a small occupied area on a substrate.SOLUTION: A semiconductor storage device comprises: a semiconductor substrate 100; a memory cell array being provided on the semiconductor substrate 100 and comprising a plurality of memory cells MC; and a control circuit including a capacitor CP and supplying a voltage to the memory cell array. The memory cell array is provided in a first region MR on the semiconductor substrate 100 and comprises first conductors BC extending in a lamination direction vertical with respect to a substrate top surface. The capacitor CP comprises a pair of electrodes provided in a second region CR different from the first region MR on the semiconductor substrate. Each of the pair of electrodes comprises a second conductor 403 extending in the lamination direction. The first conductors BC and the second conductors 403 are constituted of the same materials.SELECTED DRAWING: Figure 5A