发明名称 |
IMAGE SENSING DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
Some embodiments of the present disclosure provide a method of manufacturing a back side illuminated (BSI) image sensor. The method includes receiving a semiconductive substrate; forming a photosensitive element at a front side of the semiconductive substrate; forming a transistor coupled to the photosensitive element; forming a recess at a back side of the semiconductive substrate; forming a first dielectric layer lining to a side portion of the recess and over the back side of the semiconductor substrate; covering a conductive material over the first dielectric layer and filling in the recess; forming a conductive column on top of the recess by patterning the conductive material; and forming a second dielectric layer covering the conductive column and the first dielectric layer. |
申请公布号 |
US2016148970(A1) |
申请公布日期 |
2016.05.26 |
申请号 |
US201414554649 |
申请日期 |
2014.11.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
CHENG YUN-WEI;TSAI TSUNG-HAN;CHOU CHUN-HAO;LEE KUO-CHENG;CHIEN VOLUME;HSU YUNG-LUNG |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
HSINCHU TW |