METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ION IMPLANTATION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and an ion implantation device capable of suppressing human errors in ion implantation resumed after interruption.SOLUTION: A method includes a step S16 of measuring a physical quantity that corresponds to a state of a photoresist film arranged on a first semiconductor substrate and provided with an opening and that is changed by first ion implantation to the first semiconductor substrate via the photoresist film. In a case where the measured physical quantity satisfies a first condition (S18:YES), first ion implantation S22a is performed to the first semiconductor substrate, and a later step S24 different from the first ion implantation is performed to the first semiconductor substrate after the first ion implantation. In a case where the measured physical quantity does not satisfy the first condition (S18:NO), the later step S24 is performed to the first semiconductor substrate without performing the first ion implantation.SELECTED DRAWING: Figure 9