A semiconductor device includes a dielectric material and an interconnect structure. The semiconductor device further includes a barrier layer positioned between the dielectric material and the interconnect structure. The barrier layer includes two or more metals. Each metal of the two or more metals of the barrier layer is phase segregated from each other metal of the two or more metals.
申请公布号
WO2016081160(A1)
申请公布日期
2016.05.26
申请号
WO2015US57369
申请日期
2015.10.26
申请人
QUALCOMM INCORPORATED
发明人
BAO, JUNJING;XU, JEFFREY JUNHAO;ZHU, JOHN JIANHONG;YANG, DA;SONG, STANLEY SEUNGCHUL;YEAP, CHOH FEI