发明名称 BARRIER STRUCTURE
摘要 A semiconductor device includes a dielectric material and an interconnect structure. The semiconductor device further includes a barrier layer positioned between the dielectric material and the interconnect structure. The barrier layer includes two or more metals. Each metal of the two or more metals of the barrier layer is phase segregated from each other metal of the two or more metals.
申请公布号 WO2016081160(A1) 申请公布日期 2016.05.26
申请号 WO2015US57369 申请日期 2015.10.26
申请人 QUALCOMM INCORPORATED 发明人 BAO, JUNJING;XU, JEFFREY JUNHAO;ZHU, JOHN JIANHONG;YANG, DA;SONG, STANLEY SEUNGCHUL;YEAP, CHOH FEI
分类号 H01L23/532;H01L21/768 主分类号 H01L23/532
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