SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND REPLACEMENT METAL GATE STRUCTURE AND RELATED METHODS

摘要

A semiconductor device may include a substrate having a channel recess therein, a plurality of spaced apart shallow trench isolation (STI) regions in the substrate, and source and drain regions spaced apart in the substrate and between a pair of the STI regions. A superlattice channel may be in the channel recess of the substrate and extend between the source and drain regions, with the superlattice channel including a plurality of stacked group of layers, and each group of layers of the superlattice channel including stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. A replacement gate may be over the superlattice channel.

主权项

1. A method for making a semiconductor device comprising:
forming a plurality of spaced apart shallow trench isolation (STI) regions in a substrate; forming a dummy gate on the substrate between a pair of the STI regions; forming source and drain regions in the substrate on opposing sides of the dummy gate and between the pair of STI regions; forming a dielectric layer on the substrate surrounding the dummy gate; removing the dummy gate and portions of the substrate beneath the dummy gate to define a channel recess in the substrate between the source and drain regions; forming a superlattice channel in the channel recess including a plurality of stacked groups of layers, each group of layers of the superlattice channel comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions; and forming a replacement gate over the superlattice channel and removing the dielectric layer.