METHOD FOR PRODUCING A THIN FILM TRANSISTOR

摘要

A method for producing a thin film transistor includes forming a transistor prototype on a substrate, with the transistor prototype including a face having a to-be-treated portion. The to-be-treated portion of the transistor prototype is exposed in an environment full of a supercritical fluid. The supercritical fluid conducts a surface treatment on the to-be-treated portion of the transistor prototype to form a thin film transistor. The method can solve the problem of too many defects of the thin film transistor resulting from a low-temperature process.

主权项

1. A method for producing a thin film transistor, comprising:
forming a transistor prototype on a substrate, with the transistor prototype including a face having a to-be-treated portion; and exposing the to-be-treated portion of the transistor prototype in an environment full of a supercritical fluid, with the supercritical fluid conducting a surface treatment on the to-be-treated portion of the transistor prototype to form a thin film transistor, wherein the to-be-treated portion of the transistor prototype is irradiated with ultraviolet light during the surface treatment by the supercritical fluid, wherein the supercritical fluid contains a cosolvent, wherein the transistor prototype is placed in a reaction chamber filled with the supercritical fluid during the surface treatment by the supercritical fluid, and wherein a ratio of a volume of the cosolvent to a volume of the reaction chamber is 1:100.