SEMICONDUCTOR LASER AND OPTICAL INTEGRATED LIGHT SOURCE INCLUDING THE SAME

摘要

A semiconductor laser according to the present invention includes an active layer, a guide layer laminated on the active layer, a diffraction grating formed along a light emission direction in the guide layer, an upper electrode provided above the guide layer, and a lower electrode provided below the active layer. The diffraction grating includes a current-injection diffraction grating and current-non-injection diffraction gratings provided both in front of and in back of the current-injection diffraction grating. Phase shifters are individually provided at a central portion of the current-injection diffraction grating and at boundaries between the current-injection diffraction grating and the current-non-injection diffraction gratings. The upper electrode is provided above the current-injection diffraction grating and is not provided above the current-non-injection diffraction gratings.

主权项

1. A semiconductor laser, comprising:
an active layer; a guide layer laminated on said active layer; a diffraction grating formed along a light emission direction in said guide layer; an upper electrode provided above said guide layer; and a lower electrode provided below said active layer, wherein said diffraction grating includes:
a current-injection diffraction grating; andcurrent-non-injection diffraction gratings provided both in front of and in back of said current-injection diffraction grating, phase shifters are individually provided at a central portion of said current-injection diffraction grating and at boundaries between said current-injection diffraction grating and said current-non-injection diffraction gratings, and said upper electrode is provided above said current-injection diffraction grating and is not provided above said current-non-injection diffraction gratings.