发明名称 |
PERPENDICULAR MAGNETIC RECORDING MEDIUM AND MAGNETIC STORAGE APPARATUS |
摘要 |
A perpendicular magnetic recording medium includes a perpendicular magnetic layer provided above a nonmagnetic substrate, and a protection layer provided on the perpendicular magnetic layer. The perpendicular magnetic layer has an hcp structure, and includes stacked layers having a (0002) crystal plane oriented parallel to a surface of the nonmagnetic substrate. An uppermost layer amongst the stacked layers includes polycrystal grains selected from a CoCr-base alloy, a CoPt-base alloy, a CoCrPt-base alloy, and a CoPtCr-base alloy. The protection layer makes contact with the uppermost layer of the perpendicular magnetic layer, and includes a single graphene layer or a graphene stack, and an amorphous carbon layer. The single graphene layer or the graphene stack is bonded in parallel to a (0002) crystal plane of the polycrystal grains. |
申请公布号 |
US2016148633(A1) |
申请公布日期 |
2016.05.26 |
申请号 |
US201514935529 |
申请日期 |
2015.11.09 |
申请人 |
SHOWA DENKO K.K. ;JAPAN ATOMIC ENERGY AGENCY |
发明人 |
HASEGAWA Kota;UKAI Takahiro;YAMAKAWA Eishin;ENTANI Shiro;SAKAI Seiji |
分类号 |
G11B5/73;G11B5/72;G11B5/127 |
主分类号 |
G11B5/73 |
代理机构 |
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代理人 |
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主权项 |
1. A perpendicular magnetic recording medium comprising:
a nonmagnetic substrate; a perpendicular magnetic layer provided above the nonmagnetic substrate; and a protection layer provided on the perpendicular magnetic layer, wherein the perpendicular magnetic layer has a hexagonal close packed structure, and includes a plurality of stacked layers having a (0002) crystal plane oriented parallel to a surface of the nonmagnetic substrate, wherein an uppermost layer amongst the plurality of stacked layers of the perpendicular magnetic layer includes polycrystal grains, wherein the polycrystal grains are selected from a group consisting of a CoCr-base alloy, a CoPt-base alloy, a CoCrPt-base alloy, and a CoPtCr-base alloy, wherein the protection layer makes contact with the uppermost layer of the perpendicular magnetic layer, and includes a single graphene layer or a graphene stack, and an amorphous carbon layer, and wherein the single graphene layer or the graphene stack is bonded in parallel to a (0002) crystal plane of the polycrystal grains. |
地址 |
Tokyo JP |