SOURCE/DRAIN STRUCTURE AND MANUFACTURING THE SAME

摘要

A method for lithography exposing process is provided. The method includes performing a first lithography exposing process to a resist layer using a mask having a focus-sensitive pattern and an energy-sensitive pattern; measuring critical dimensions (CDs) of transferred focus-sensitive pattern and transferred energy-sensitive pattern on the resist layer; extracting Bossung curves from the CDs; and determining slopes of the Bossung curves.

主权项

1. A device comprising:
a semiconductor substrate having a source/drain region; a plurality of isolation regions over the semiconductor substrate; and a source/drain feature in the source/drain region, the source/drain feature including:
multiple plug-type portions over the substrate, wherein each of the plug-type portions is isolated from each other by a respective isolation region; anda single upper portion over the isolation regions, wherein the single upper portion is merged from the multiple plug-type portions, wherein the single upper portion has a top surface facing away from a top surface of the isolation regions, wherein the top surface of the single upper portion includes a first flat surface connected to a multi-facet surface and a second flat surface connected to the multi-facet surface.