| 发明名称 |
METHOD OF ANALYZING GROWTH OF TWO-DIMENSIONAL MATERIAL |
| 摘要 |
A method of analyzing growth of a two-dimensional material includes forming a two-dimensional material layer includes defects on a substrate, depositing detection material layers on the defects, and one of (i) capturing an image of the two-dimensional material layer on which the detection material layers are deposited and processing the captured image, or (ii) obtaining map coordinates of the detection material layers and processing the obtained map coordinates. |
| 申请公布号 |
US2016148369(A1) |
申请公布日期 |
2016.05.26 |
| 申请号 |
US201514810948 |
申请日期 |
2015.07.28 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
JEONG Seongjun;LEE Jaeho;PARK Seongjun |
| 分类号 |
G06T7/00;G06T7/40;C23C14/34;G06F17/14;C23C16/455;C23C16/56 |
主分类号 |
G06T7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of analyzing growth of a two-dimensional material, the method comprising:
forming a two-dimensional material layer on a substrate, the two-dimensional material layer including defects; depositing detection material layers on the defects; and one of
capturing an image of the two-dimensional material layer on which the detection material layers are deposited and processing the captured image, orobtaining map coordinates of the detection material layers and processing the obtained map coordinates. |
| 地址 |
Suwon-si KR |
