发明名称 IMAGE SENSOR PIXELS HAVING BUILT-IN VARIABLE GAIN FEEDBACK AMPLIFIER CIRCUITRY
摘要 An image sensor may include an array of image sensor pixels. Each pixel may have a photodiode, a floating diffusion node, and charge transfer gate. An amplifying transistor may have a gate terminal coupled to the floating diffusion and a drain terminal coupled to an output node. The amplifying transistor may provide signal corresponding to transferred charge with a greater than unity voltage gain. A negative voltage feedback capacitor having variable capacitance may be coupled between the output node and the floating diffusion node thereby increasing the pixel dynamic range. A reset transistor may be coupled between the floating diffusion and output node. The amplifying transistor may include a p-channel transistor formed within a mini n-well region of the pixel or an n-channel transistor formed within a mini p-well region. The pixel may have increased storage capacity and dynamic range relative to conventional designs.
申请公布号 US2016150174(A1) 申请公布日期 2016.05.26
申请号 US201414553822 申请日期 2014.11.25
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES LLC 发明人 Hynecek Jaroslav
分类号 H04N5/3745;H01L27/146 主分类号 H04N5/3745
代理机构 代理人
主权项 1. An image sensor pixel, comprising: a photodiode that generates charge in response to image light; a floating diffusion node; a charge transfer transistor configured to transfer the generated charge from the photodiode to the floating diffusion node; an amplifying transistor having a gate terminal coupled to the floating diffusion node and a drain terminal coupled to a pixel output node; and a feedback capacitor coupled between the pixel output node and the floating diffusion node, wherein the amplifying transistor is configured to provide the transferred charge with a greater than unity gain and the feedback capacitor is configured to provide negative voltage feedback to the floating diffusion node.
地址 Phoenix AZ US