发明名称 |
IMAGE SENSOR PIXELS HAVING BUILT-IN VARIABLE GAIN FEEDBACK AMPLIFIER CIRCUITRY |
摘要 |
An image sensor may include an array of image sensor pixels. Each pixel may have a photodiode, a floating diffusion node, and charge transfer gate. An amplifying transistor may have a gate terminal coupled to the floating diffusion and a drain terminal coupled to an output node. The amplifying transistor may provide signal corresponding to transferred charge with a greater than unity voltage gain. A negative voltage feedback capacitor having variable capacitance may be coupled between the output node and the floating diffusion node thereby increasing the pixel dynamic range. A reset transistor may be coupled between the floating diffusion and output node. The amplifying transistor may include a p-channel transistor formed within a mini n-well region of the pixel or an n-channel transistor formed within a mini p-well region. The pixel may have increased storage capacity and dynamic range relative to conventional designs. |
申请公布号 |
US2016150174(A1) |
申请公布日期 |
2016.05.26 |
申请号 |
US201414553822 |
申请日期 |
2014.11.25 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC |
发明人 |
Hynecek Jaroslav |
分类号 |
H04N5/3745;H01L27/146 |
主分类号 |
H04N5/3745 |
代理机构 |
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代理人 |
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主权项 |
1. An image sensor pixel, comprising:
a photodiode that generates charge in response to image light; a floating diffusion node; a charge transfer transistor configured to transfer the generated charge from the photodiode to the floating diffusion node; an amplifying transistor having a gate terminal coupled to the floating diffusion node and a drain terminal coupled to a pixel output node; and a feedback capacitor coupled between the pixel output node and the floating diffusion node, wherein the amplifying transistor is configured to provide the transferred charge with a greater than unity gain and the feedback capacitor is configured to provide negative voltage feedback to the floating diffusion node. |
地址 |
Phoenix AZ US |